✦ LIBER ✦

Non-equivalence of direct and reverse interfaces in AlAs-GaAs superlattice structures as evidenced by X-ray diffraction

✍ Scribed by P. Auvray; M. Baudet; C. Deparis; J. Massies

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 396 KB
Volume: 127
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(93)90740-n

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

X-Ray Diffraction Analysis of the In/Ga

X-Ray Diffraction Analysis of the In/Ga and In/Al Interface Diffusion in Superlattices (GaAs)n(InAs)(AlAs)n/GaAs(001) and (AlAs)n(InAs)(GaAs)n/GaAs(001)

✍ Jose Fayos; Mercedes Perez-Mendez 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 225 KB

Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice

Interface structure of large-period latt

Interface structure of large-period lattice-matched in GaAs/InP superlattices grown by metalorganic molecular beam epitaxy: a high-resolution X-ray diffraction study

✍ J.M. Vandenberg; R.A. Hamm; S.N.G. Chu 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 515 KB

Structure of GaAs-In0.2Ga0.8As heterojun

Structure of GaAs-In0.2Ga0.8As heterojunction interface studied by electron spectroscopies: X-ray photoelectron spectroscopy, tunable electron energy loss spectroscopy and Auger electron spectroscopy

✍ M. Iwami; Y. Watanabe; H. Kato; M. Nakayama; N. Sano 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 364 KB