𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Non-destructive evaluation of ion implantation-induced microhardness by photothermal spectroscopy

✍ Scribed by H.D. Geiler; H. Karge; A. Kluge

Book ID
103632076
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
547 KB
Volume
66
Category
Article
ISSN
0257-8972

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Ion-beam-induced crystallization of carb
Ion-beam-induced crystallization of carbon-implanted silicon studied by auger electron spectroscopy
✍ Steffen, Hans Joachim πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 501 KB

The inΓ‘uence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ‚ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.