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Noise performance of submicrometer AlInAs-GaInAs HEMTs

โœ Scribed by Mishra, U.K.; Brown, A.S.; Rosenbaum, S.E.; Delaney, M.J.; Vaughn, S.; White, K.

Book ID
114538447
Publisher
IEEE
Year
1988
Tongue
English
Weight
155 KB
Volume
35
Category
Article
ISSN
0018-9383

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Microwave performance and reliability ev
Microwave performance and reliability evaluation of MOCVD-grown AlInAs/GaInAs/InP-based HEMTs
โœ M. Nawaz; W. Strupinski; J. Stenarson; S. H. M. Persson; H. Zirath ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 289 KB

We report on the microwaยจe performance and reliability eยจaluation of AlInAsrGaInAsrInP HEMTs with InP as a top surface layer grown by MOCVD. It is found that HEMTs with thin InP surface layers proยจide high threshold ยจoltage uniformity, and less thermal and bias stress degradation compared to conยจent