𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications

✍ Scribed by Lopez, J.M.; Gonzalez, T.; Pardo, D.; Bollaert, S.; Parenty, T.; Cappy, A.


Book ID
114617372
Publisher
IEEE
Year
2004
Tongue
English
Weight
397 KB
Volume
51
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Optimization of AlGaN/GaN HEMTs for high
✍ Palacios, T. ;Dora, Y. ;Chakraborty, A. ;Sanabria, C. ;Keller, S. ;DenBaars, S. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 233 KB

## Abstract In this paper, the structure and processing of AlGaN/GaN high electron mobility transistors have been optimized for maximum small signal gain at high frequencies. The effect of the gate resistance, gate‐to‐drain capacitance and output conductance on the power gain cut‐off frequency, __f

Optimization of AlGaN/GaN HEMTs for high
✍ Palacios, T. ;Dora, Y. ;Chakraborty, A. ;Sanabria, C. ;Keller, S. ;DenBaars, S. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 371 KB

## Abstract In the article [1] featured at Editor's Choice, the structure and processing of AlGaN/GaN high electron mobility transistors (HEMTs) have been optimized for maximum small signal gain at high frequencies. The cover picture combines the sample structure – shown schematically and in a scan