Noise in Al single electron transistors of stacked design
β Scribed by V. A. Krupenin; D. E. Presnov; M. N. Savvateev; H. Scherer; A. B. Zorin; J. Niemeyer
- Book ID
- 121817775
- Publisher
- American Institute of Physics
- Year
- 1998
- Tongue
- English
- Weight
- 345 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.368474
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π SIMILAR VOLUMES
We have operated a single-electron transistor (SET) in the radio-frequency mode. In this way both the bandwidth and the sensitivity of the traditional SET can be increased several orders of magnitude. By optimizing the system we reached a best sensitivity of 3:2 Γ 10 -6 e= β Hz. We use this system t
## Abstract The biasβvoltage dependent oscillations of the magnetoresistance in CoβAlβCo singleβelectron transistors have been investigated. Above the critical voltage comprising of superconducting gap and the charging energy, the conductanceβvoltage characteristics show an oscillatory behavior wit