Spin accumulation and magnetotransport in Co-Al-Co single-electron transistors

✍ Scribed by Shyu, J. H. ;Chen, J. W. ;Yao, Y. D. ;Wu, J. K.

• Book ID: 105364694
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 268 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200777145

✦ Synopsis

Abstract

The bias‐voltage dependent oscillations of the magnetoresistance in Co‐Al‐Co single‐electron transistors have been investigated. Above the critical voltage comprising of superconducting gap and the charging energy, the conductance‐voltage characteristics show an oscillatory behavior with increasing bias‐voltage, resulting from the Coulomb staircase. We demonstrate that magnetoresistance could vary periodically from positive to negative values with bias‐voltage. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)