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Noise performance of the radio-frequency single-electron transistor

✍ Scribed by Kevin Bladh; David Gunnarsson; Abdelhanin Aassime; Marian Taslakov; Rob Schoelkopf; Per Delsing

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
103 KB
Volume
18
Category
Article
ISSN
1386-9477

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✦ Synopsis

We have operated a single-electron transistor (SET) in the radio-frequency mode. In this way both the bandwidth and the sensitivity of the traditional SET can be increased several orders of magnitude. By optimizing the system we reached a best sensitivity of 3:2 Γ— 10 -6 e= √ Hz. We use this system to study charge noise up to 1 MHz and to demonstrate pulsed, short-time measurements of charge.

πŸ“œ SIMILAR VOLUMES

Analytical noise model of a high-electro
Analytical noise model of a high-electron-mobility transistor for microwave-frequency application
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 154 KB

## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient