๐”– Bobbio Scriptorium
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Nitrogen implanted etch-stop layers in silicon

โœ Scribed by R. Paneva; G. Temmel; E. Burte; H. Ryssel


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
383 KB
Volume
27
Category
Article
ISSN
0167-9317

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๐Ÿ“œ SIMILAR VOLUMES


Laser annealing of nitrogen and oxigen i
โœ G. Della Mea; P. Mazzoldi; G. Foti; E. Rimini ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› Elsevier Science โš– 192 KB

Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of