TEM sample preparation, VLSI, semiconductor processing, Defect analysis A cross-sectional sample preparation technique is described that relies on lithographic and dry-etching processing, thus avoiding metallographic polishing and ion milling. The method is capable of producing cross-sectional trans
โฆ LIBER โฆ
NiMnGa nanostructures produced by electron beam lithography and Ar-ion etching
โ Scribed by D. Auernhammer; M. Schmitt; M. Ohtsuka; M. Kohl
- Book ID
- 111633519
- Publisher
- Springer-Verlag
- Year
- 2008
- Tongue
- English
- Weight
- 916 KB
- Volume
- 158
- Category
- Article
- ISSN
- 1951-6355
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