New silicon carbide device techniques
β Scribed by Bowe, J.J.; Frost, J.A.
- Book ID
- 118697015
- Publisher
- Institute of Electrical and Electronics Engineers
- Year
- 1959
- Tongue
- English
- Weight
- 381 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0096-2430
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
This issue's intriguing Japanese interviews (page 25) disclose that there is an emerging wave of new venture SiC device developers springing up, complementing Japan's SiC substrate suppliers. Hopefully this will add considerable momentum to SiC developments in compound semiconductor markets.
## Abstract Silicon carbide CVD for device applications is the topic of this Special Issue of __Chemical Vapor Deposition__. In this introduction, Guest Editors Michel Pons and Peter Wellman give an overview of the current technologies for SiC thinβfilm growth with adjacent contributions on layer c