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New method for patterning the rear passivation layers of high-efficiency solar cells

โœ Scribed by I. S. Moon; D. S. Kim; S. H. Lee

Book ID
110313327
Publisher
Springer US
Year
2001
Tongue
English
Weight
302 KB
Volume
12
Category
Article
ISSN
0957-4522

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Peripheral loss reduction of high effici
Peripheral loss reduction of high efficiency silicon solar cells by MOS gate passivation, by poly-Si filled grooves and by cell pattern design
โœ Jianhua Zhao; Aihua Wang; Pietro P. Altermatt; Guangchun Zhang ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 203 KB

This paper reports a variety of methods to reduce the peripheral or edge losses in high eciency silicon PERL (Passivated Emitter, Rear Locally-diused) cells. A MOS (Metal Oxide Semiconductor) structure was investigated as a way to passivate the peripheral region of high eciency PERL silicon solar ce