New metal-organic precursors for growth
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A.C. Jones; P.A. Lane; T. Martin; C.R. Whitehouse
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Article
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1993
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Elsevier Science
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English
⚖ 699 KB
The growth of GaAs and AI~Ga~ \_wAs by chemical beam epitaxy (CBE) has traditionally utilized triethylgallium (Et3Ga) and either triethylaluminium (Et3A1) or triisobutylaluminium (i-Bu3AI). However, these precursors frequently give rise to layers which are significantly contaminated with carbon and