Molecular beam epitaxy of GaAs/AlxGa1−xAs/InyGa1−yAs heterostructures for opto-electronic devices: control of growth parameters

✍ Scribed by K. Ko¨hler

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 685 KB
• Volume: 100-101
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/0169-4332(96)00305-4