Positron study of electron irradiation-i
โ
A. Kawasuso; M. Yoshikawa; H. Itoh; R. Krause-Rehberg; F. Redmann; T. Higuchi; K
๐
Article
๐
2006
๐
Elsevier Science
๐
English
โ 184 KB
Based on positron annihilation experiments, we have proposed that in 3C-SiC isolated silicon vacancies are responsible for positron trapping after electron irradiation. We have also proposed that in hexagonal SiC one type of vacancy defects survives after annealing at 1000 1C which is attributable t