✦ LIBER ✦

Nearly isotropic etching of 6H-SiC in NF3 and O2 using a remote plasma

✍ Scribed by Luther, B. P.; Ruzyllo, J.; Miller, D. L.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High rate etching of 4H–SiC using a SF[s

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Etching characteristics of polysilicon,

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Study of SF 6 and SF 6 /O 2 plasmas in a

✍ Pessoa, R S; Tezani, L L; Maciel, H S; Petraconi, G; Massi, M 📂 Article 📅 2010 🏛 Institute of Physics 🌐 English ⚖ 310 KB

Modeling the Remote-Controlled Organizat

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A comparative Study on the Wear Behavior

✍ G. Perumal, M. Geetha, R. Asokamani… 📂 Article 📅 2013 🏛 Springer-Verlag 🌐 English ⚖ 673 KB

Conversion of carbohydrates and lignocel

✍ Yang, Yu ;Hu, Chang-wei ;Abu-Omar, Mahdi M. 📂 Article 📅 2012 🏛 Royal Society of Chemistry 🌐 English ⚖ 164 KB