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Near-band-gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy

✍ Scribed by Terashima, Koichi; Tajima, Michio; Tatsumi, Toru


Book ID
120154963
Publisher
American Institute of Physics
Year
1990
Tongue
English
Weight
633 KB
Volume
57
Category
Article
ISSN
0003-6951

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✍ D.C. Houghton; J.-P. Noël; N.L. Rowell 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 757 KB

Photoluminescence has been observed from Si~ \_xGex alloy layers, superlattices and non-periodic multilayers where x was varied from 0 to 0.6. A p-type Si082Ge0 is alloy layer 200 nm thick, grown by molecular beam epitaxy (MBE), has been fabricated into a mesa diode which operated as a light-emittin