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Nature of the impurity bands of the edge luminescence of highly doped compensated ZnSe:N

โœ Scribed by A. L. Gurskii


Book ID
110622644
Publisher
Springer US
Year
2000
Tongue
English
Weight
522 KB
Volume
67
Category
Article
ISSN
0021-9037

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A comparative study of the photoluminescence, reflection, and photoluminescence excitation spectra of MBE-and MOVPE-grown nitrogen-doped ZnSe samples has been carried out. MOVPEgrown samples demonstrate impurity recombination via shallow donor states while MBE-grown samples show mainly recombination