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Luminescence of ZnSe near the band edge under strong laser light excitation

โœ Scribed by Koh Era; Dietrich W. Langer

Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
789 KB
Volume
1-2
Category
Article
ISSN
0022-2313

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A Comparative Study of the Near Band Edg
A Comparative Study of the Near Band Edge Luminescence of Epitaxial ZnSe:N Grown by MBE and MOVPE
โœ A.L. Gurskii; H. Hamadeh; H. Kalisch; M. Heuken; G.P. Yablonskii; K. Heime ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 119 KB ๐Ÿ‘ 1 views

A comparative study of the photoluminescence, reflection, and photoluminescence excitation spectra of MBE-and MOVPE-grown nitrogen-doped ZnSe samples has been carried out. MOVPEgrown samples demonstrate impurity recombination via shallow donor states while MBE-grown samples show mainly recombination