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Nature of the 0.111-eV acceptor level in indium-doped silicon

✍ Scribed by Baron, R.; Baukus, J. P.; Allen, S. D.; McGill, T. C.; Young, M. H.; Kimura, H.; Winston, H. V.; Marsh, O. J.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A new acceptor level in indium-doped sil

✍ Baron, R.; Young, M. H.; Neeland, J. K.; Marsh, O. J. 📂 Article 📅 1977 🏛 American Institute of Physics 🌐 English ⚖ 524 KB

Infrared spectra of new acceptor levels

✍ Scott, Walter 📂 Article 📅 1978 🏛 American Institute of Physics 🌐 English ⚖ 513 KB

Comments of the Ev + 0.45 eV Quenched-in

✍ Ioannou, D. E. 📂 Article 📅 1982 🏛 John Wiley and Sons 🌐 English ⚖ 169 KB

Impurity Concentration Broadening of Acc

✍ K. L. Bhatia 📂 Article 📅 1971 🏛 John Wiley and Sons 🌐 English ⚖ 310 KB

On the Nature of the Interstitial Defect

✍ Murin, L. I. 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 148 KB

Evidence for an excited level of the neu

✍ K.R. Elliott; S.A. Lyon; D.L. Smith; T.C. McGill 📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 217 KB