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A new acceptor level in indium-doped silicon

✍ Scribed by Baron, R.; Young, M. H.; Neeland, J. K.; Marsh, O. J.

Book ID: 120013480
Publisher: American Institute of Physics
Year: 1977
Tongue: English
Weight: 524 KB
Volume: 30
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.89249

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