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Evidence for an excited level of the neutral indium acceptor in silicon

✍ Scribed by K.R. Elliott; S.A. Lyon; D.L. Smith; T.C. McGill

Publisher: Elsevier Science
Year: 1979
Tongue: English
Weight: 217 KB
Volume: 70
Category: Article
ISSN: 0375-9601
DOI: 10.1016/0375-9601(79)90325-6

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