Nature of current and of forward-bias electroluminescence excess noise in GaAs-diodes
✍ Scribed by N.B. Lukyanchikova; N.P. Garbar; M.K. Sheinkman; M.N. Zargarjantz
- Publisher
- Elsevier Science
- Year
- 1972
- Tongue
- English
- Weight
- 602 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Gallium nitride has attracted a great deal of interest in recent years due to its power handling ability. In addition, its noise performance is known to be good. In this letter, we present a method for determining the bias current density needed to obtain optimal noise figure for galliu
The influence of the p-n junction breakdown mechanism on the Er 3+ electroluminescence (EL) intensity and excitation efficiency (an intra 4f transition 4 I 13/2 → 4 I 15/2 of Er 3+ ion at the wavelength of 1.54 m) has been investigated in Si:Er light emitting diodes (LED) grown with sublimation mole