We present the first detection of native defects in ZnSiP 2 . Similar to p-type ZnGeP 2 , the EPR spectra of the zinc vacancy V ร Zn ; the phosphorus vacancy V 0 P ; as well as of group IV anti-site Si รพ Zn รฐGe รพ Zn ร could be proved. The influence of the group IV-ions on the bonding behavior for th
โฆ LIBER โฆ
Native point defects in binary InP semiconductors
โ Scribed by Mishra, Rohan; Restrepo, Oscar D.; Kumar, Ashutosh; Windl, Wolfgang
- Book ID
- 118801256
- Publisher
- Springer
- Year
- 2012
- Tongue
- English
- Weight
- 987 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0022-2461
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