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Thermodynamic modeling of native point defects and dopants of GaN semiconductors

✍ Scribed by Jing-Bo Li; Jean-Claude Tedenac


Book ID
107452818
Publisher
Springer US
Year
2002
Tongue
English
Weight
202 KB
Volume
31
Category
Article
ISSN
0361-5235

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EPR and electrical studies of native poi
✍ W Gehlhoff; D Azamat; A Krtschil; A Hoffmann; A Krost πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 385 KB

We present the first detection of native defects in ZnSiP 2 . Similar to p-type ZnGeP 2 , the EPR spectra of the zinc vacancy V Γ€ Zn ; the phosphorus vacancy V 0 P ; as well as of group IV anti-site Si ΓΎ Zn Γ°Ge ΓΎ Zn Þ could be proved. The influence of the group IV-ions on the bonding behavior for th