Narrow-gap semiconducting silicides: the band structure

✍ Scribed by A.B Filonov; D.B Migas; V.L Shaposhnikov; V.E Borisenko; A Heinrich

• Book ID: 104306733
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 229 KB
• Volume: 50
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00289-0

✦ Synopsis

Electronic property simulation of the narrow-gap semiconducting rhenium and ruthenium silicides has been performed by the linear muffin-tin orbital method (LMTO) within the local density approximation. ReSi was found to have an indirect 1.75 gap value of 0.16 eV. The first direct transition with appreciable oscillator strength at 0.30 eV is predicted. Ru Si is revealed 2 3

to be a direct gap semiconductor with an energy gap of 0.41 eV, while the isostructural Ru Ge has a competitive 2 3

indirect-direct character of the band gap of about 0.31 eV.