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Elementary energy bands in the band structure of the narrow-band-gap semiconductor CdSb

✍ Scribed by Bercha, D. M.; Slipukhina, I. V.; Sznajder, M.; Rushchanskii, K. Z.


Book ID
118154456
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
389 KB
Volume
70
Category
Article
ISSN
1098-0121

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πŸ“œ SIMILAR VOLUMES


On the band structure of CdSb
✍ V. Frei; B. VelickΓ½ πŸ“‚ Article πŸ“… 1965 πŸ› Springer 🌐 English βš– 785 KB
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Electronic property simulation of the narrow-gap semiconducting rhenium and ruthenium silicides has been performed by the linear muffin-tin orbital method (LMTO) within the local density approximation. ReSi was found to have an indirect 1.75 gap value of 0.16 eV. The first direct transition with app