Narrow-gap semiconducting silicides: the
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A.B Filonov; D.B Migas; V.L Shaposhnikov; V.E Borisenko; A Heinrich
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Article
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2000
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Elsevier Science
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English
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Electronic property simulation of the narrow-gap semiconducting rhenium and ruthenium silicides has been performed by the linear muffin-tin orbital method (LMTO) within the local density approximation. ReSi was found to have an indirect 1.75 gap value of 0.16 eV. The first direct transition with app