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Narrow channel Si-MOSFETs for electron transport studies

โœ Scribed by J.R. Gao; J. Caro; A.H. Verbruggen; S. Radelaar; J. Middelhoek


Book ID
107920390
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
745 KB
Volume
9
Category
Article
ISSN
0167-9317

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Tensile-strained Si on relaxed Si 1ร€x Ge x buffers has emerged as an important channel material for improving CMOS performance. The ability of tensile-strained Si to dramatically improve MOSFET drive currents has received much attention in the literature in recent years, but little is known about it