Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi
โฆ LIBER โฆ
Nanostructured CdS prepared on porous silicon substrate: Structure, electronic, and optical properties
โ Scribed by Zhang, P.; Kim, P. S.; Sham, T. K.
- Book ID
- 120069645
- Publisher
- American Institute of Physics
- Year
- 2002
- Tongue
- English
- Weight
- 591 KB
- Volume
- 91
- Category
- Article
- ISSN
- 0021-8979
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## Abstract During an anodization process, porous silicon (PS) consisting of pores with a diameter of about 40 nm and a depth from 5 ยตm to 40 ยตm has been produced. To achieve oriented channels in this mesoporous range, a p^+^โtype Si wafer was electrochemically etched in an aqueous electrolyte of H
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