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Nanostructure formation by O 2+ ion sputtering of Si/SiGe heterostructures

✍ Scribed by Lau, G S; Tok, E S; Liu, R; Wee, A T S; Tjiu, W C; Zhang, J


Book ID
120269638
Publisher
Institute of Physics
Year
2003
Tongue
English
Weight
290 KB
Volume
14
Category
Article
ISSN
0957-4484

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Using atom beam co-sputtering of SiO 2 , Ge and Si targets, composite films containing Si, Ge and SiO x at different compositions were prepared and annealed at different temperatures . The influence of annealing temperatures on phase formation in the composite films was studied. The films were chara