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Nanoscale semiconductor Pb1−xSnxSe (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

✍ Scribed by Shaoxiong Lin; Xin Zhang; Xuezhao Shi; Jinping Wei; Daban Lu; Yuzhen Zhang; Huanhuan Kou; Chunming Wang


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
511 KB
Volume
257
Category
Article
ISSN
0169-4332

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In this paper the formation and characterization of the I-III-VI 2 semiconductor compound CuInS 2 (CIS) on gold substrate at room temperature by electrochemical atomic layer deposition (EC-ALD) method are reported. Optimum deposition potentials for each element are determined using cyclic voltammetr