Ternary semiconductor compounds CuInS2 (CIS) thin films synthesized by electrochemical atomic layer deposition (EC-ALD)

✍ Scribed by Shaoxiong Lin; Xuezhao Shi; Xin Zhang; Huanhuan Kou; Chunming Wang

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 355 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2010.02.032

✦ Synopsis

In this paper the formation and characterization of the I-III-VI 2 semiconductor compound CuInS 2 (CIS) on gold substrate at room temperature by electrochemical atomic layer deposition (EC-ALD) method are reported. Optimum deposition potentials for each element are determined using cyclic voltammetry (CV) technique and Amperometric I-t method is used to prepare the semiconductor compound. These thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and Fourier transform infrared spectroscopy (FT-IR). XRD results indicate that the CIS thin films have a (1 1 2) preferred orientation. The XPS analyses of the films reveal that Cu, In and S are present in an atomic ratio of approximately 1:1:2. And their semiconductor band gaps are found to be 1.50 eV by FT-IR.