Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes

✍ Scribed by Periyayya Uthirakumar; Ji Hye Kang; Beo Deul Ryu; Hyung Gu Kim; Hyun Kyu Kim; Chang-Hee Hong

• Book ID: 103844520
• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 892 KB
• Volume: 166
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2009.11.024

✦ Synopsis

We propose a simple technique to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs) by using nanoscale ITO/ZnO layer-texturing. The surface texturing of the ITO and ZnO layers was performed using a wet chemical etching and a spin-coating process, respectively. It has been found that the light extraction efficiency of the ITO-/ZnO-textured LED was 34.5% greater than that of a conventional LED with a planar ITO, at 20 mA of current injection. A high level of multiple light scattering at the textured surface promoted a high-efficiency in the InGaN/GaN LEDs. In addition, the individual performance of the ITO and ZnO texturing on the LED surface was also investigated. The lowered forward voltage of the ITO/ZnO layer-textured LED indicated this could be a damage-free approach for device fabrication.