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Nanocrystalline silicon fabrication by conventional plasma enhanced chemical vapor deposition for bottom gate thin film transistor

✍ Scribed by S.W. Kim; D.L. Choi

Book ID
113793727
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
282 KB
Volume
64
Category
Article
ISSN
0167-577X

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Plasma enhanced chemical vapor deposited
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistorsβ€”a critical review
✍ Yue Kuo πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 400 KB

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN x ) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today. In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the