Organic Thin Film Transistor Integration Volume 1302 (A Hybrid Approach) || Gate Dielectrics by Plasma Enhanced Chemical Vapor Deposition (PECVD)

Plasma enhanced chemical vapor deposited

Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—a critical review

✍ Yue Kuo 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 400 KB

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN x ) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today. In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the