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N-Polar InAlN/AlN/GaN MIS-HEMTs

✍ Scribed by Brown, David F; Nidhi, ; Feng Wu, ; Keller, Stacia; DenBaars, Steven P; Mishra, Umesh K

Book ID
120590472
Publisher
IEEE
Year
2010
Tongue
English
Weight
466 KB
Volume
31
Category
Article
ISSN
0741-3106

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Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs
✍ Kuzmik, J. ;Carlin, J.-F. ;Gonschorek, M. ;Kostopoulos, A. ;Konstantinidis, G. ; πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 200 KB

## Abstract Gate and drain‐lag effects are studied in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs grown on sapphire. Electron trapping on the surface states between the gate and the drain forming the net negative charge up‐to ∼2 Γ— 10^13^ cm^–2^ is found to be responsible for the gate‐lag effect in the