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Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

✍ Scribed by Nidhi, ; Dasgupta, Sansaptak; Lu, Jing; Speck, James S.; Mishra, Umesh K.

No coin nor oath required. For personal study only.

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