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[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax

✍ Scribed by Denninghoff, D.; Lu, J.; Ahmadi, E.; Keller, S.; Mishra, U. K.


Book ID
124050969
Publisher
IEEE
Year
2013
Weight
506 KB
Category
Article
ISBN
1479908126

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