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N-channel accumulation layer MOSFET operating at 4 K

โœ Scribed by Ruby N. Ghosh; Robert H. Silsbee

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
416 KB
Volume
30
Category
Article
ISSN
0011-2275

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โœฆ Synopsis

An accumulation layer n-channel MOSFET that operates at 4 K has been fabricated. Sharp hysteretic current kinks in the I-V characteristic are observed, where the transistor switches discontinuously between two well defined states. The kinks are modelled in terms of changes in the device potential configuration due to holes generated by avalanche breakdown in the high electric field region near pinch off. Noise measurements which elucidate the physical mechanisms causing the current kinks are presented.

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Field-induced generation-recombination noise in (100) n-channel Si-MOSFET's at T = 4.2 K: II. Experiments
โœ E.A. Hendriks; R.J.J. Zijlstra ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science โš– 358 KB

The spectral noise intensity of the drain current of an n-channel (100) Si-MOSFET in strong inversion was measured as a function of drain current and gate voltage at T = 4.2 K, In addition to flicker noise and white noise it was possible to distinguish a Lorentzian, which was due to generation-recom