Mössbauer spectroscopy investigation of the DX-center in Te-implanted AlxGa1−xAs
✍ Scribed by H. Bemelmans; G. Borghs; G. Langouche
- Book ID
- 113282667
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 336 KB
- Volume
- 63
- Category
- Article
- ISSN
- 0168-583X
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The present work is aimed to investigate the electron emission from DX centers in tellurium-doped Al x Ga 1Àx As with aluminium composition x = 0.40 using deep-level transient spectroscopy. Evidence that Te-DX exhibits an alloy splitting is shown from the temperature-dependent emission at a given re
The coexistence of the DX center with other donor-related bound states has been investigated in Si-doped direct gap AI,Ga I \_ xAs, by comparing electron density data obtained by capacitance/voltage and Hall measurements. These experiments were carried out under saturated persistent photoconductivit
Two statistics are developed using the multiconfigurate character of the DX center to analyse donors in n-type Al x Ga 1--x As:Si. The first statistics is derived assuming that the conduction electrons arise exclusively from DX centers. The second statistics supposes the existence of shallow donors