InGaN Multiple-Quantum-Well Light Emitti
β
Zhang, B.J. ;Egawa, T. ;Ishikawa, H. ;Nishikawa, N. ;Jimbo, T. ;Umeno, M.
π
Article
π
2001
π
John Wiley and Sons
π
English
β 89 KB
π 2 views
Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for