𝔖 Bobbio Scriptorium
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multiple quantum well light emitting diodes

✍ Scribed by Franssen, G.; Perlin, P.; Suski, T.


Book ID
121527812
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
70 KB
Volume
69
Category
Article
ISSN
1098-0121

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InGaN Multiple-Quantum-Well Light Emitti
✍ Zhang, B.J. ;Egawa, T. ;Ishikawa, H. ;Nishikawa, N. ;Jimbo, T. ;Umeno, M. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 89 KB πŸ‘ 2 views

Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for