Multiple-angle-of-incidence ellipsometry
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NL Dmitruk; OS Gorea; TA Mikhailik; VR Romaniuk; LA Zabashta
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Article
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1998
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Elsevier Science
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English
β 348 KB
In this paper we present results of multiple-angle-of-incidence (MAI) ellipsometry for strained GaAs/GaP x As 1-x superlattices (SL) with the composition x ΒΌ 0.4 and with different layer thickness in the range of 8-80 nm. SLs have been grown on the GaAs (100) substrates by chemical vapour deposition