Multi-charged acceptor centers in p-doped Si/Si1−xGex/Si quantum wells in the presence of a magnetic field
✍ Scribed by Luis G.C. Rego; José A Brum; Pawel Hawrylak
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 90 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1386-9477
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📜 SIMILAR VOLUMES
The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrödinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat
We present the electronic structure of p-type d-doped quantum wells in Si and GaAs including exchange effects in the Thomas-Fermi-Dirac approximation. We also carry out Schro ¨dinger-Poisson self-consistent calculations considering the particularities the exchange potential has in the Local Density