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MOVPE growth of beryllium-doped gallium arsenide using diethylberyllium

โœ Scribed by J.D. Parsons; L.S. Lichtmann; F.G. Krajenbrink; D.W. Brown


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
345 KB
Volume
77
Category
Article
ISSN
0022-0248

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The epitaxial growth of gallium arsenide
โœ T Maeda; M Hata; Y Zempo; N Fukuhara; Y Matsuda; K Sawara ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 387 KB

The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700ยฐC. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo