𝔖 Bobbio Scriptorium
✦   LIBER   ✦

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

✍ Scribed by Hardtdegen, H. ;Kaluza, N. ;Schmidt, R. ;Steins, R. ;Yakovlev, E. V. ;Talalaev, R. A. ;Makarov, Yu. N. ;Zettler, J.-T.

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
317 KB
Volume
201
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

MOVPE growth and characterization of pol
MOVPE growth and characterization of polar, semipolar and nonpolar InN on sapphire substrate
✍ Moret, Matthieu ;Ruffenach, Sandra ;Briot, Olivier ;Gil, Bernard πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 424 KB

## Abstract We have investigated the heteroepitaxy of indium nitride (InN) directly grown on nitridated sapphire substrates having different orientations. Growths were performed on __C__, __A__, __M__ and __R__‐plane oriented sapphire in order to analyse the substrate orientation effect on the stru