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MOVPE for InP-based optoelectronic device application

✍ Scribed by I. Gyuro


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
817 KB
Volume
9
Category
Article
ISSN
0961-1290

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✦ Synopsis


MOVPE for InP-based optoelectroniΒ’ device application


πŸ“œ SIMILAR VOLUMES


InP-based devices and their applications
✍ P. Parikh; K. Kiziloglu; M. Mondry; P. Chavarkar; B. Keller; S. Denbaars; U. Mis πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 636 KB

that exists between the p + InGaAs and the 2DEG in the channel exhibits low leakage and a high breakdown voltage. More importantly, the gate-to-channel separation is determined solely by MBE growth, which leads to high threshold uniformity. Any problems of gate contact resistance are addressed by ve

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## Abstract The syntheses, properties, and optoelectronic device characteristics of four new 3,6‐carbazole‐based donor/acceptor conjugated copolymers are reported. Such copolymers are used to explore the effects of acceptor strength and backbone coplanarity on the electronic and optoelectronic prop