MOVPE for InP-based optoelectronic device application
β Scribed by I. Gyuro
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 817 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0961-1290
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β¦ Synopsis
MOVPE for InP-based optoelectroniΒ’ device application
π SIMILAR VOLUMES
that exists between the p + InGaAs and the 2DEG in the channel exhibits low leakage and a high breakdown voltage. More importantly, the gate-to-channel separation is determined solely by MBE growth, which leads to high threshold uniformity. Any problems of gate contact resistance are addressed by ve
## Abstract The syntheses, properties, and optoelectronic device characteristics of four new 3,6βcarbazoleβbased donor/acceptor conjugated copolymers are reported. Such copolymers are used to explore the effects of acceptor strength and backbone coplanarity on the electronic and optoelectronic prop