𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Applications and markets for semiconductor optoelectronic devices

✍ Scribed by R.C. Goodfellow

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
563 KB
Volume
9
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Application of the transition semiconduc
Application of the transition semiconductor semimetal in modulated nanostructures for communication as infrared optoelectronic device
✍ A. El Abidi; A. Nafidi; H. Chaib; A. El Kaaouachi; M. Braigue; R. Morghi; E.Y. E πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 413 KB

We report here electronic properties of a two-dimensional modulated superlattice nanostructure. Our sample, grown by MBE, had a period d =d 1 + d 2 (90 layers) of d 1 =5.6 nm (HgTe)/d 2 = 3 nm (CdTe). Calculations of the specters of energy E(d 2 ), E(k z ) and E(k p ), respectively, in the direction

Semiconductor drift detectors: applicati
Semiconductor drift detectors: applications and new devices
✍ A. Castoldi; C. Fiorini; C. Guazzoni; A. Longoni; L. StrΓΌder πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 225 KB

Recent technological developments and new topology designs have made semiconductor drift detectors ideal devices for high-resolution x-ray spectrometry. In this paper the basic topology of a semiconductor drift detector with on-chip electronics specially designed for x-ray spectrometry is reviewed.