Application of the transition semiconductor semimetal in modulated nanostructures for communication as infrared optoelectronic device
✍ Scribed by A. El Abidi; A. Nafidi; H. Chaib; A. El Kaaouachi; M. Braigue; R. Morghi; E.Y. EL Yakoubi; M. d’Astuto
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 413 KB
- Volume
- 405
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
We report here electronic properties of a two-dimensional modulated superlattice nanostructure. Our sample, grown by MBE, had a period d =d 1 + d 2 (90 layers) of d 1 =5.6 nm (HgTe)/d 2 = 3 nm (CdTe). Calculations of the specters of energy E(d 2 ), E(k z ) and E(k p ), respectively, in the direction of growth and in plane of the superlattice; were performed in the envelope function formalism. The energy E (d 2 , G, 4.2 K,), shown that for each d 1 /d 2 , when d 2 increase the gap E g decrease to zero at the transition semiconductor to semimetal conductivity behavior and become negative accusing a semimetallic conduction. At 4.2 K, the sample exhibits p type conductivity with a Hall mobility of 8200 cm 2 /Vs. This allowed us to observe the Shubnikov-de Haas effect with p =1.80  10 12 cm À 2 . Using the calculated effective mass ðm à HH ¼ 0; 297m 0 Þ of the degenerated heavy holes gas, the Fermi energy (2D) was E F =14 meV in agreement with 12 meV of thermoelectric power a. In intrinsic regime, a$T À 3/2 and R H T 3/2 indicates a gap E g =E 1 À HH 1 =190 meV in agreement with calculated E g (G, 300 K)=178 meV. The formalism used here predicts that this sample is a narrow gap, two-dimensional modulated nanostructure and medium-infrared detector.