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MOS transistor modeling for RF IC design

✍ Scribed by Enz, C.; Cheng, Y.


Book ID
119775524
Publisher
IEEE
Year
2000
Tongue
English
Weight
469 KB
Volume
35
Category
Article
ISSN
0018-9200

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## Abstract On the basis of RF characteristics and measured small‐signal parameters, an equivalent circuit model was formulated and characterized for metal‐semiconductor field effect transistors based on H‐terminated polycrystalline diamond. Starting from on‐wafer measurements, a bias‐dependent tra