๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

MOSFET modeling for RF IC design

โœ Scribed by Yuhua Cheng; Deen, M.J.; Chih-Hung Chen


Book ID
114617875
Publisher
IEEE
Year
2005
Tongue
English
Weight
848 KB
Volume
52
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Empirical nonlinear modeling for RF MOSF
โœ Seonghearn Lee ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 412 KB

A new empirical model with an external substrate network is proposed to simulate the RF nonlinear characteristics of a MOSFET accurately in the wide range of operating bias points. An accurate drain current equation is developed to model the nonlinear transconductance characteristics of a RF MOSFET,